Name: IRFBE30 4.1A 800V N-Channel Mosfet Transistor
Price: 1.1 USD
Availability: InStock

Description

Single N-Channel MosFET
Third generation HexFETs from International Rectifier provide the designer with the best combination of fast-switching, ruggedized device design, low on-resistance, and cost-effectiveness.

The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Ratings:
Drain to Source Voltage (Vdss):800V
Current-Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs @ 25° C: 3 Ohm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds: 1300pF @ 25V
Power-Max: 125W
Gate Charge (Qg) @ Vgs: 78nC @ 10V
Package: TO-220AB

With removable heatsink

Full Datasheet IRFBE30

Manufactured by: International Rectifier®
Part Number: IRFBE30

Our Price: $1.10

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