West Florida Components - 2N6490 15A 60V General Purpose PNP Power Transistor ON Semiconductor

Description

General Purpose PNP Power Transistors
Complement NPN: 2N6487
For use in general purpose amplifier and switching applications.

Maximum Ratings:
Collector-Emitter Voltage: 60V
Collector-Base Voltage: 70V
Emitter-Base Voltage: 5.0V
Collector Current - Continuous: 15A
Base Current: 5.0A
Total Power Dissipation @ TC = 25C: 75W
- Derate above 25�C: 0.6W/�C
Total Power Dissipation @ TA = 25C: 1.8W
- Derate above 25C: 0.014W/�C

Thermal Characteristics:
Thermal Resistance, Junction-to-Case: 1.67�C/W
Thermal Resistance, Junction-to-Ambient: 70�C/W

Electrical Characteristics (TA=25�C unless otherwise noted):

OFF Characteristics
Collector-emitter Sustaining Voltage (IC = 200mA, IB = 0): 60V min.
Collector-emitter Sustaining Voltage (IC = 200mA, VBE = 1.5V): 70V min.
Collector Cutoff Current (VCE = 30V, IB = 0): 1.0mA max.
Collector Cutoff Current
- VCE = 65V, VEB(off) = 1.5V: 500uA max.
- VCE = 60V, VEB(off) = 1.5V, TC = 150�C: 5.0uA max.
Emitter Cutoff Current (VBE = 5.0V, IC = 0): 1.0mA max.

ON Characteristics
DC Current Gain
- IC = 5.0A, VCE = 4.0V: 20 min. ; 150 max.
- IC = 15A, VCE = 4.0V: 5.0 min.
Collector-Emitter Saturation Voltage
- IC = 5.0A, IB = 0.5A: 1.3V max.
- IC = 15A, IB = 5.0A: 3.5V max.
Base-emitter On Voltage
- IC = 5.0A, VCE = 4.0V: 1.3V max.
- IC = 15A, VCE = 4.0V: 3.5V

Dynamic Characteristics
Current-Gain Bandwidth Product (IC = 1.0A, VCE = 4.0V, ftest = 1.0MHz): 5.0MHz min.
Small-Signal Current Gain (IC = 1.0A, VCE = 4.0V, f = 1.0kHz): 25MHz min.

Manufactured by: ON Semiconductor
Part Number: 2N6490

Full Datasheet: 2N6490 BJT Power Transistor 15A 60V ON Semi

Our Price: $0.80

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