Name: BAS21LT1G High Voltage Switching Diode ON Semi
Price: 0.1 USD
Availability: InStock

Description

High Voltage Switching Diodes

Thermal Characteristics (Maximum):
Total Device Dissipation FR-5 Board (TA=25�C): 225mW
Derate above 25�C: 1.8mW/�C
Thermal Resistance Junction-to-Ambient: 556�C/W
Junction and Storage Temperature Range: -55�C to 150�C

Electrical Characteristics (TA=25�C unless otherwise noted):
Reverse Voltage Leakage Current (VR = 200 Vdc): 0.1uA max.
Reverse Breakdown Voltage (IBR = 100 uAdc): 250V min.
Forward Voltage (IF = 100 mAdc): 1.0Vmax.
Diode Capacitance (VR = 0, f = 1.0 MHz): 5.0pF max.
Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100): 50ns max.

Manufactured by: ON Semiconductor
Part Number: BAS21LT1G

Full Datasheet: BAS21LT1G

RoHS Compliant

Our Price: $0.10

Description

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Lead/Terminal Type

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RoHS Compliant