2N7000 0.5A MOSFET Transistor Fairchild

Our Price: $0.10

Description

MOSFET Transistors

Features:
- High density cell design for low RDS(ON).
- Voltage controlled small signal switch.
- Rugged and reliable.
- High saturation current capability.

Description / Additional Information

The 2N7000 is a N-Channel enhancement mode field effect transistor. On state resistance is minimized by the design of this part while still maintaining the fast switching performance, toughness and reliability.

Electrical Characteristics (TA=25�C unless otherwise noted):

OFF:
Drain-Source Breakdown Voltage (VGS = 0 V, ID = 10 uA): 60V min
Zero Gate Voltage Drain Current (VDS = 48 V, VGS = 0 V): 1uA max.
Gate-Body Leakage, Forward (VGS = 15 V, VDS = 0 V): 10nA max.
Gate-Body Leakage, Reverse (VGS = -15 V, VDS = 0 V): -10nA max.

ON:
Gate Threshold Voltage (VDS = VGS, ID = 1 mA): 2.1V typ.
Static Drain-Source On-Resistance (VGS = 10 V, ID = 500 mA): 1.2 ohm typ.
Drain-Source On-Voltage (VGS = 10 V, ID = 500 mA): 0.6V typ.
On-State Drain Current (VGS = 4.5 V, VDS = 10 V): 600mA typ.
Forward Transconductance (VDS = 10 V, ID = 200 mA): 320mS typ.

DYNAMIC:
Input Capacitance (VDS = 25 V, VGS = 0 V,f = 1.0 MHz): 20pF typ.
Output Capacitance (VDS = 25 V, VGS = 0 V,f = 1.0 MHz): 11pF typ.
Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V,f = 1.0 MHz): 4pF
Turn-On / Turn-Off Time (VDD = 15 V, RL = 25 Ω, ID = 500 mA, VGS = 10 V,RGEN = 25): 10ns

Applications:
- Servo motor control
- Power MOSFET gate drivers
- Switching applications

Manufactured by: Fairchild
Part Number: 2N7000

Full Datasheet: 2N7000

Manufacturer

Fairchild

Part Number

2N7000

Amps

.5A

Package

TO-92

Lead/Terminal Type

Radial

Number Leads/Terminals

3

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